Datasheet > TCR3DM11A

TCR3DM11A

更新时间： 2023-12-06 20:12:36

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
20页	714K
描述
300 mA Fixed Output LDO Regulator, 1.1 V, DFN4D

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TCR3DM11A 数据手册

TCR3DMxxA series

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCR3DMxxA series

300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

1. Description

The TCR3DMxxA series are CMOS general-purpose single-output

voltage regulators with an on/off control input, featuring low dropout

voltage, low output noise voltage, fast load transient response and

low inrush current.

These voltage regulators are available in fixed output voltages

between 1.0 V and 4.5 V and capable of driving up to 300 mA. They

feature Overcurrent protection, Thermal shutdown, Inrush current

protection circuit and Auto-discharge.

The TCR3DMxxA series is offered in the ultra small plastic mold

package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) and has a low

dropout voltage of 216 mV (2.5 V output, I

= 300 mA) with low

OUT

output noise voltage of 38 μVrms (2.5 V output). As small ceramic

input and output capacitors 1.0 μF can be used with the TCR3DMxxA

series, these devices are ideal for portable applications that require

high-density board assembly such as cellular phones.

DFN4D

Weight: 1.1 mg (typ.)

2. Applications

Power IC developed for portable applications

3. Features

• Ultra small package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.))

• Wide range output voltage line up (V

• Low dropout voltage

= 1.0 to 4.5 V)

OUT

V_DO= 175 mV (typ.) at 3.3 V output, I_OUT= 300 mA

V_DO= 216 mV (typ.) at 2.5 V output, I_OUT= 300 mA

V_DO= 297 mV (typ.) at 1.8 V output, I_OUT= 300 mA

• Low output noise voltage (V

= 38 μV_rms(typ.) at 10Hz ≤ f ≤ 100kHz)

• High ripple rejection ratio (72 dB (typ.) at 2.5 V output, I_OUT= 10 mA, f = 1 kHz)

• Fast load transient response (±80 mV (typ.) at 2.5 V output, I_OUT= 1 mA ⇔ 300 mA)

• Overcurrent protection

• Thermal shutdown

• Inrush current protection circuit

• Auto-discharge

• Pull down connection between CONTROL and GND

• Ceramic capacitors can be used (C = 1.0 μF, C

= 1.0 μF)

OUT

2023-05-09

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...20

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