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TCR3DM135 PDF预览

TCR3DM135

更新时间: 2023-12-06 20:12:58
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
15页 775K
描述
300 mA Fixed Output LDO Regulator, 1.35 V, DFN4

TCR3DM135 数据手册

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TCR3DM series  
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic  
TCR3DM series  
300 mA CMOS Low Dropout Regulator with inrush current protection circuit  
The TCR3DM series are CMOS general-purpose single-output voltage  
regulators with an on/off control input, featuring low dropout voltage, low  
output noise voltage and low inrush current.  
These voltage regulators are available in fixed output voltages between 1.0  
V and 4.5 V and capable of driving up to 300 mA.  
They feature over-current protection, over-temperature protection, Inrush  
current protection circuit and Auto-discharge function.  
The TCR3DM series are offered in the ultra small plastic mold package  
DFN4/DFN4E (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout voltage of  
210 mV (2.5 V output, IOUT = 300 mA) with low output noise voltage of 38  
BOTTOM VIEW ILLUSTRATION  
DFN4/DFN4E  
μVrms (2.5 V output) and a load transient response of only ΔVOUT = ±80 mV  
( IOUT = 1 mA300 mA, COUT =1.0 μF).  
As small ceramic input and output capacitors can be used with the  
TCR3DM series, these devices are ideal for portable applications that require  
high-density board assembly such as cellular phones.  
Weight : 1.3 mg ( typ.)  
Features  
Low Dropout voltage  
VDO = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA  
VDO = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA  
VDO = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA  
Low output noise voltage  
VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz  
Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA 300 mA, COUT =1.0 μF)  
High ripple rejection (R.R = 70 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =1 kHz)  
Overcurrent protection  
Over-temperature protection  
Inrush current protection circuit  
Auto-discharge  
Pull down connection between CONTROL and GND  
Ceramic capacitors can be used (CIN = 1.0 μF, COUT =1.0 μF)  
Ultra small package DFN4/DFN4E (1.0 mm x 1.0 mm ; t 0.58 mm)  
Start of commercial production  
2013-03  
© 2021  
2021-09-27  
1
Toshiba Electronic Devices & Storage Corporation  

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