Datasheet > TBL200N06-5DL8

TBL200N06-5DL8

更新时间： 2024-04-09 18:59:16

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	762K
描述
43A, 60V, 83W, N Channel, Power MOSFETs

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TBL200N06-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL200N06-5DL8

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_DS= 48V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±1 00

On Characteristics

V_GS= 10V,I_D= 20A

V_GS= 4.5V,I_D= 15A

V_DS= V_GS, I_D= 250μA

V_GS= 0V, f = 1MHz

2.5

mΩ

R_DS(ON)

Drain-Source On-resistance ^*2

1.7

2.8

V_GS(th)

R_G

Gate Threshold Voltage

Gate Resistance

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

1659

158

V_GS= 0V

Output Capacitance

V_DS= 15V

f = 1.0MHz

Reverse Transfer Capacitance

132

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*4

Turn-on Rise Time ^*4

Turn-Off Delay Time ^*4

Turn-Off Fall Time ^*4

Total Gate-Charge

7.4

5.1

28.2

5.5

V_DD= 30V

V_GS= 10V

R_G= 3Ω

R_L= 6.7Ω

Q_G

V_DD= 48V

V_GS= 10V

I_D= 15A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

10.7

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage ^*2

Reverse Recovery Time

Reverse Recovery Charge

I_SD= 5A, V_GS= 0V

0.79

1.2

I_F= 15A, V_GS= 0V

d_I/d_t= 100A/μs

Qrr

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. The E_ASdata shows Max. rating. The test condition is V_DD= 25V, V_GS= 10V, L = 0.1mH

4. Guaranteed by design, not subject to production

MTM0627A: June 2023 [2.2]

www.gmesemi.com

123 4 5 6

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