Datasheet > TBL220N10-5DL8

TBL220N10-5DL8

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	898K
描述
55A, 100V, 83W, N Channel, Power MOSFETs

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数据手册

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TBL220N10-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL220N10-5DL8

Features



Trench FET® power MOSFET

Halogen free

Qualified to AEC-Q101 standards for high reliability

Applications



Automotive systems

DC-to-DC converters

Solenoid drivers

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL220N10-5DL8

PDFN5×6-8L

5000 pcs / Tape & Reel

220N10

Maximum Ratings (@ T_C= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

100

±20

Unit

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (V_GS= 10V)

Continuous Drain Current (V_GS= 10V) @ T_C= 100°C

Pulsed Drain Current (tp ≤ 10 µs; pulsed)

I_D

I_DM

220

Thermal Characteristics

Parameter

Power Dissipation @ T_C= 25°C

Symbol

Value

Unit

P_D

R_θJC

T_J

Thermal Resistance Junction-to-Case (bottom)

Operating Junction Temperature Range

Storage Temperature Range

1.8

°C /W

°C

-55 ~ +175

T_STG

°C

MTM0711A: September 2022 [1.1]

www.gmesemi.com

12 3 4 5

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