Datasheet > T2SC4617

T2SC4617

更新时间： 2024-04-09 19:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	163K
描述
50V,0.1A,General Purpose NPN Bipolar Transistor

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T2SC4617 数据手册

Product Specification

NPN general purpose Transistor

T2SC4617

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50μA,I_E=0

I_C=1.0mA,I_B=0

I_E=50μA,I_C=0

V_CB=30V,I_E=0

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown

voltage

Emitter-base breakdown voltage

Collector cut-off current

0.5

μA

Emitter cut-off current

DC current gain

I_EBO

h_FE

V_EB=4V,I_C=0

0.5

560

0.4

V_CE=6V,I_C=1mA

I_C=60mA, I_B=5.0mA

120

Collector-emitter saturation voltage V_CE(sat)

V_CE=12V,

Transition frequency

f_T

180

MHz

I_C=2.0mA,f=30MHz

Collector output capacitance

C_ob

V_CB=12V, I_C=0,f=1MHz

2.0

CLASSIFICATION OF H_FE

RANK

RANGE

120-270

180-390

270-560

MARKING

STM0468A

www.gmesemi.com

123 4

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