Datasheet > T2SB1198

T2SB1198

更新时间： 2024-04-09 19:03:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	308K
描述
80V,0.5A,General Purpose PNP Bipolar Transistor

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T2SB1198 数据手册

Product Specification

Low-frequency Transistor

T2SB1198

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50μA,I_E=0

-80

V_(BR)CEOI_C=-2mA,I_B=0

-80

-5

V_(BR)EBOI_E=-50μA,I_C=0

I_CBO

I_EBO

V_CB=-50V,I_E=0

V_EB=-4V,I_C=0

-0.5

μA

Emitter cut-off current

DC current gain

h_FE

V_CE=-3V,I_C=-100mA

120

390

-0.5

Collector-emitter saturation voltage

I_C=-500mA, I_B=-50mA

V_CE(sat)

-0.2

180

V_CE=-10V, I_E=50mA

f=100MHz

Transition frequency

f_T

MHz

Collector output capacitance

V_CB=-10V,I_E=0,f=1MHz

C_ob

CLASSIFICATION OF h_FE

Range

120-270

180-390

Marking

STM0319A

www.gmesemi.com

123 4

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