Datasheet > T2SB766A

T2SB766A

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	226K
描述
50V,1A,General Purpose PNP Bipolar Transistor

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T2SB766A 数据手册

Product Specification

Silicon PNP Epitaxial Planer Transistor

T2SB766A

FEATURES



Large collector power dissipation P_C



Complementary to T2SD874A

Halogen free

Qualified to AEC-Q101 standards for high reliability



Mini Power type package, allowing

downsizing of the equipment and automatic

insertion through the tape packing and the

magazine packing

SOT-89

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-89

T2SB766A

BQ/BR/BS

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-60

-50

-5

-1

-1.5

I_CP

Peak collector current

Collector power dissipation

Junction and storage temperature

P_C

T_J,T_STG

-55 to+150

℃

STM0466A

www.gmesemi.com

12 3 4

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