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T2500B-BC

更新时间: 2024-01-15 01:12:11
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摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
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T2500B-BC 数据手册

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Order this document  
by T2500/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
TRIACs  
6 AMPERES RMS  
200 thru 800 VOLTS  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage  
(T = –40 to +100°C, Gate Open)  
J
V
DRM  
Volts  
T2500 B  
200  
400  
600  
800  
D
M
N
On-State Current RMS  
(Full Cycle Sine Wave 50 to 60 Hz)  
(T = +80°C)  
I
6
60  
15  
16  
0.2  
4
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
I
TSM  
C
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
Peak Gate Power  
(T = +80°C, Pulse Width = 1 µs)  
C
P
GM  
Watts  
Watt  
Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
G(AV)  
Peak Gate Trigger Current (Pulse Width = 10 µs)  
Operating Junction Temperature Range  
Storage Temperature Range  
I
Amps  
°C  
GTM  
T
J
–40 to +100  
–40 to +150  
T
stg  
°C  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  

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