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T2316160A PDF预览

T2316160A

更新时间: 2022-11-26 03:13:27
品牌 Logo 应用领域
TMT /
页数 文件大小 规格书
13页 140K
描述
1024K x 16 DYNAMIC RAM FAST PAGE MODE

T2316160A 数据手册

 浏览型号T2316160A的Datasheet PDF文件第2页浏览型号T2316160A的Datasheet PDF文件第3页浏览型号T2316160A的Datasheet PDF文件第4页浏览型号T2316160A的Datasheet PDF文件第5页浏览型号T2316160A的Datasheet PDF文件第6页浏览型号T2316160A的Datasheet PDF文件第7页 
TE  
tmCH  
T2316160A  
1024K x 16 DYNAMIC RAM  
DRAM  
FAST PAGE MODE  
FEATURES  
GENERAL DESCRIPTION  
Industry-standard x 16 pinouts and timing  
functions.  
Single 5V (±10%) power supply.  
All device pins are TTL- compatible.  
1K-cycle refresh in 16ms.  
The T2316160A is a randomly accessed solid state  
memory containing 16,777,216 bits organized in a  
x16 configuration. The T2316160A has both  
BYTE WRITE and WORD WRITE access cycles  
via two CAS pins. It offers Fast Page mode with  
Extended Data Output.  
RAS  
CAS  
BEFORE  
Refresh modes:  
only,  
(CBR) and HIDDEN.  
RAS  
BYTE WRITE and BYTE READ access cycles.  
CAS  
The T2316160A  
determined by the first  
by the last to transition back high. Use only one of  
CAS  
function and timing are  
CAS  
to transition low and  
OPTION  
TIMING  
MARKING  
the two  
and leave the other staying high  
45ns  
60ns  
-45  
-60  
during WRITE will result in a BYTE WRITE.  
CASL to transition low in a WRITE cycle will  
write data into the lower byte (DQ0~DQ7), and  
PACKAGE  
42-pin SOJ  
44/50-pin TSOPII  
J
S
CASH  
transiting low will write data into the  
upper byte (DQ8~DQ15).  
PIN ASSIGNMENT ( Top View )  
VDD  
DQ0  
DQ1  
DQ2  
DQ3  
VDD  
Vss  
1
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
DQ15  
DQ14  
DQ13  
DQ12  
Vss  
2
V
DD  
Vss  
1
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
3
DQ0  
DQ1  
DQ2  
DQ3  
DQ15  
DQ14  
DQ13  
DQ12  
Vss  
4
2
5
3
6
4
DQ4  
DQ5  
DQ6  
DQ7  
NC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
7
5
8
V
DD  
6
9
DQ4  
DQ5  
DQ6  
DQ7  
NC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
7
10  
11  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
NC  
CASL  
CASH  
OE  
NC  
NC  
WE  
RAS  
NC  
NC  
A0  
NC  
CASL  
CASH  
OE  
A9  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
WE  
RAS  
NC  
A9  
NC  
A8  
A8  
A0  
A7  
A7  
A1  
A6  
A1  
A6  
A2  
A5  
A2  
A5  
A3  
A4  
A3  
A4  
V
DD  
Vss  
VDD  
Vss  
Taiwan Memory Technology, Inc. reserves the right P. 1  
to change products or specifications without notice.  
Publication Date: APR. 2002  
Revision:A  

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