T1110P6_14 PDF预览

T1110P6_14

更新时间: 2025-07-15 01:25:23
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威世 - VISHAY /
页数 文件大小 规格书
4页 79K
描述
Silicon PIN Photodiode

T1110P6_14 数据手册

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T1110P6  
Vishay Semiconductors  
www.vishay.com  
Silicon PIN Photodiode  
FEATURES  
A
• Package type: chip  
• Package form: single chip  
• Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28  
• Radiant sensitive area (in mm2): 7.5  
• High photo sensitivity  
• High radiant sensitivity  
• Suitable for visible and near infrared radiation  
• Fast response times  
• Angle of half sensitivity: ϕ = 60ꢀ  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
21591  
DESCRIPTION  
APPLICATIONS  
T1110P6 is a high speed and high sensitive PIN photodiode  
chip with 7.5 mm2 sensitive area detecting visible and near  
infrared radiation. Anode is the bond pad on top.  
• High speed photo detector  
GENERAL INFORMATION  
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is  
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used  
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures  
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in  
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore  
sold die may not perform on an equivalent basis to standard package products.  
PRODUCT SUMMARY  
COMPONENT  
Ira (μA)  
ϕ (deg)  
λ0.1 (nm)  
T1110P6  
55  
60  
430 to 1100  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
REMARKS  
PACKAGE FORM  
T1110P6-SD-F  
Wafer sawn on foil with disco frame  
MOQ: 8000 pcs  
Chip  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
60  
UNIT  
V
Reverse voltage  
VR  
Junction temperature  
Tj  
100  
ꢀC  
Operating temperature range  
Storage temperature range  
Storage temperature range on foil  
Tamb  
Tstg1  
Tstg2  
-40 to +100  
-40 to +100  
-40 to +50  
ꢀC  
ꢀC  
ꢀC  
Rev. 1.5, 21-May-14  
Document Number: 81122  
1
For technical questions, contact: optochipsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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