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SZMMBZ33VALT3G PDF预览

SZMMBZ33VALT3G

更新时间： 2023-06-19 14:32:58
品牌 Logo 应用领域
安森美 - ONSEMI 二极管瞬态抑制器
页数 文件大小 规格书
8页 73K
描述
Dual Common Anode Zener Diode Protection

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中文翻译

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SZMMBZ33VALT3G 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.68击穿电压标称值：33 V
最大钳位电压：46 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e3湿度敏感等级：1
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大重复峰值反向电压：26 V子类别：Transient Suppressors
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SZMMBZ33VALT3G 数据手册

 浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第2页浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第3页浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第4页浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第5页浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第6页浏览型号SZMMBZ33VALT3G的Datasheet PDF文件第7页 
MMBZ5V6ALT1 Series  
Preferred Device  
24 and 40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
SOT−23 Dual Common Anode Zeners  
for ESD Protection  
http://onsemi.com  
These dual monolithic silicon Zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
1
2
3
MARKING  
DIAGRAM  
3
Features  
SOT−23  
CASE 318  
STYLE 12  
xxx  
• Pb−Free Packages are Available  
1
• SOT−23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
• Working Peak Reverse Voltage Range − 3 V to 26 V  
2
xxx = Device Code  
= Date Code  
M
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V  
• Peak Power − 24 or 40 Watts @ 1.0 ms (Unidirectional),  
per Figure 5 Waveform  
• ESD Rating of Class N (exceeding 16 kV) per the Human  
Body Model  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
• Maximum Clamping Voltage @ Peak Pulse Current  
• Low Leakage < 5.0 mA  
• Flammability Rating UL 94 V−O  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 3 of this data sheet.  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Preferred devices are recommended choices for future use  
and best overall value.  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 7  
MMBZ5V6ALT1/D  
12345678

中文翻译

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SZMMBZ33VALT3G 替代型号

型号 品牌 替代类型 描述 数据表
SZMMBZ33VALT1G ONSEMI

类似代替

 Dual Common Anode Zener Diode Protection
MMBZ33VALT1G ONSEMI

类似代替

 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

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