Datasheet > SUM2153

SUM2153

更新时间： 2024-01-03 19:31:36

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SECOS		/
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描述
N-Channel Enhancement Mode MOSFET

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SUM2153 数据手册

SUM2153

0.81A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SOT-363

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

MECHANICAL DATA

ꢀ

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

D G

APPLICATION

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

0.08 0.25

REF.

Min.

1.80

1.15

0.80

Max.

2.20

2.45

1.35

1.10

ꢀ

DC-DC converter circuit

Load Switch

ꢀ

8°

1.10

0.10

1.50

0.35

0.650 TYP.

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-363

7 inch

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Rating

Unit

10S

Steady State

Drain – Source Voltage

V_DS

V_GS

±6

Gate – Source Voltage

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

0.89

0.71

0.38

0.24

0.76

0.61

0.28

0.17

0.81

0.64

0.31

0.2

Continuous Drain Current ¹

I_D

P_D

I_D

Power Dissipation ¹

0.69

0.55

0.23

0.15

Continuous Drain Current ²

Power Dissipation ²

P_D

Pulsed Drain Current ³

Lead Temperature

I_DM

T_L

1.4

°C

260

Operating Junction & Storage Temperature Range

T_J, T_STG

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

11-Jan-2013 Rev. A

Page 1 of 4

12 3 4

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