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STTA112 PDF预览

STTA112

更新时间: 2024-09-20 22:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管高压
页数 文件大小 规格书
8页 76K
描述
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STTA112 数据手册

 浏览型号STTA112的Datasheet PDF文件第2页浏览型号STTA112的Datasheet PDF文件第3页浏览型号STTA112的Datasheet PDF文件第4页浏览型号STTA112的Datasheet PDF文件第5页浏览型号STTA112的Datasheet PDF文件第6页浏览型号STTA112的Datasheet PDF文件第7页 
STTA112U  
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
1A  
1200V  
65ns  
1.5V  
trr (typ)  
VF (max)  
FEATURES AND BENEFITS  
SPECIFIC TO THE FOLLOWING OPERATIONS:  
SNUBBING OR CLAMPING, DEMAGNETIZATION  
ANDRECTIFICATION  
ULTRA-FAST AND SOFT RECOVERY  
VERY LOW OVERALL POWER LOSSES IN  
BOTH THE DIODE AND THE COMPANION  
TRANSISTOR  
SMB  
HIGH FREQUENCY OPERATION  
HIGH REVERSE VOLTAGECAPABILITY  
DESCRIPTION  
TURBOSWITCH 1200V drastically cuts losses in  
all high voltage operationswhich require extremely  
fast, soft and noise-free power diodes.  
They are particularly suitable in motor control  
circuitries, or in primary of SMPS as snubber,  
clamping or demagnetizing diodes. They are also  
suitableforthe secondaryof SMPSas highvoltage  
rectifier diodes.  
Due to their optimized switching performances  
they also highly decrease power losses in any  
associated switching IGBT or MOSFET in all  
freewheelmode operations.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
Unit  
V
VRRM  
IF(RMS)  
IFRM  
IFSM  
Tstg  
Repetitive peak reverse voltage  
RMS forward current  
1200  
6
A
Repetitive peak forward current  
Surge non repetitive forward current  
Storage temperature range  
tp = 5 µs F = 5kHz square  
10  
20  
A
tp = 10ms sinusoidal  
A
- 65 to + 150  
125  
°C  
°C  
Tj  
Maximum operatingjunction temperature  
TURBOSWITCH is a trademark of STMicroelectronics  
November 1999 - Ed: 5A  
1/8  

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