Datasheet > STS9NH3LL_07

STS9NH3LL_07

更新时间： 2024-09-25 06:14:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
13页	344K
描述
N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET™ III Power MOSFET

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STS9NH3LL_07 数据手册

STS9NH3LL

N-channel 30 V - 0.018 Ω - 9 A - SO-8

low gate charge STripFET™ III Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

9 A

STS9NH3LL

30 V

0.022 Ω

■ Optimal R

x Qg trade-off @ 4.5 V

DS(on)

■ Conduction losses reduced

■ Switching losses reduced

SO-8

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This application specific Power MOSFET is the

third generation of STMicroelectronics unique

“single feature size” strip-based process. The

resulting transistor shows the best trade-off

between on-resistance and gate charge. When

used as high and low side in buck regulators, it

gives the best performance in terms of both

conduction and switching losses. This is

extremely important for motherboards where fast

switching and high efficiency are of paramount

importance.

Table 1.

Order code

STS9NH3LL

Device summary

Marking

Package

SO-8

Packaging

S9NH3LL

Tape & reel

December 2007

Rev 3

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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