Datasheet > STK40N2LLH5

STK40N2LLH5

更新时间： 2024-01-29 19:21:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	321K
描述
N-channel 25 V, 0.0014 Ω, 40 A, PolarPAK® STripFET™ V Power MOSFET

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STK40N2LLH5 数据手册

STK40N2LLH5

N-channel 25 V, 0.0014 Ω, 40 A, PolarPAK^®

STripFET™ V Power MOSFET

Preliminary Data

Features

R_DS(on)

max

Type

V_DSS

R_DS(on)*Q_gP_TOT

STK40N2LLH5 25V <0.0017Ω 61.2nC*mΩ 5.2W

■ Ultra low top and bottom junction to case

thermal resistance

■ Extremely low on-resistance R

DS(on)

PolarPAK^®

■ R

*Q industry benchmark

DS(on)

■ High avalanche ruggedness

■ Fully encapsulated die

■ 100% Matte tin finish (in compliance with the

2002/95/EC european directive)

■ PolarPAK^®is a trademark of VISHAY

Figure 1.

Internal schematic diagram

Application

■ Switching applications

Description

This product utilizes the 5th generation of design

rules of ST’s proprietary STripFET™ technology.

The lowest available R

*Q , in this chip scale

DS(on)

package, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

Bottom View

Top View

Table 1.

Device summary

Order code

Marking

Package

PolarPAK^®

Packaging

STK40N2LLH5

402L5

Tape and reel

July 2008

Rev 1

1/13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...13

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