Datasheet > STGIB15CH60TS-LZ

STGIB15CH60TS-LZ

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
24页	759K
描述
SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs

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STGIB15CH60TS-LZ 数据手册

STGIB15CH60TS-LZ

Electrical characteristics

T_J= 25 °C unless otherwise specified.

Inverter part

3.1

Table 6. Static

Symbol

Parameter

Test conditions

= 600 V, V = V = 15 V

Min.

Typ. Max. Unit

Collector-cut off current

100

µA

CES

boot

= V

= 15 V, V ⁽¹⁾= 0 to 5 V,

boot

1.55

1.65

2.1

= 15 A

= V

Collector-emitter saturation

voltage

CE(sat)

= 15 V, V ⁽¹⁾= 0 to 5 V,

boot

= 20 A

= 0 V, I = 15 A

1.54

1.65

2.15

Diode forward voltage

= 0 V, I = 20 A

1. Applied between HINx, LINx and GND for x = U, V, W.

Table 7. Inductive load switching time and energy

Symbol

Parameter

Turn-on time

Test conditions

Min.

Typ. Max. Unit

(1)

320

160

510

102

290

440

213

(1)

Cross-over time on

Turn-off time

c(on)

(1)

µJ

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

Turn-on time

c(off)

⁽²⁾= 0 to 5 V, I = 15 A

off

(1)

338

178

500

(1)

Cross-over time on

Turn-off time

c(on)

(1)

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

c(off)

⁽²⁾= 0 to 5 V, I = 20 A

300

624

296

off

and t include the propagation delay time of the internal drive. t

and t are the switching times of the IGBT itself

c(off)

off

c(on)

under the internally given gate driving condition.

2. Applied between HINx, LINx and GND for x = U, V, W.

DS13301 - Rev 2

page 6/24

1...3 4 567 8 9...24

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