Datasheet > STGIB15CH60TS-LZ

STGIB15CH60TS-LZ

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
24页	759K
描述
SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs

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STGIB15CH60TS-LZ 数据手册

STGIB15CH60TS-LZ

Absolute maximum ratings

T_J= 25 °C unless otherwise noted.

Table 2. Inverter part

Symbol

Parameter

Supply voltage applied between P -N , -N , -N

Value

450

500

600

Unit

Supply voltage (surge) applied between P -N , -N , -N

U V W

PN(surge)

CES

Collector-emitter voltage each IGBT

Continuous collector current each IGBT (T = 25 °C)

±I

Continuous collector current each IGBT (T = 80 °C)

±I

Peak collector current each IGBT (less than 1 ms)

Total power dissipation at T =25 °C each IGBT

TOT

Short circuit withstand time, V = 300 V, T = 125 °C, V = V = 15 V,

boot

μs

scw

= 0 to 5 V

Table 3. Control part

Symbol

Parameter

-GND, V

Min.

- 0.3

Max.

Unit

Supply voltage applied between V

Bootstrap voltage

-GND

CCL

CCH

619

BOOT

- 21

+ 0.3

BOOT

Output voltage applied between U, V, W and GND

Comparator input voltage

OUT

BOOT

- 0.3

-0.3

CIN

Logic input voltage applied between HINx, LINx and GND

Open-drain voltage

/OD

Open-drain sink current

5.5

Temperature sensor output voltage

Temperature sensor output current

-0.3

TSO

Table 4. Total system

Parameter

Symbol

Value

Unit

Isolation withstand voltage applied between each pin and heat sink plate

(AC voltage, t = 60 s)

ISO

1600

Vrms

Power chips operating junction temperature range

Module operation case temperature range

-40 to 175

-40 to 125

°C

DS13301 - Rev 2

page 4/24

1 2 345 6 7...24

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