生命周期: | Obsolete | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.315 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STFM350TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Me | |
STFM350TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Me | |
STFM350VP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Me | |
STFM350VX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Me | |
STFM440SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
STFM440SLX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
STFM440TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
STFM440TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
STFM440VX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
STFM450SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Me |