Datasheet > SNA-200

SNA-200

更新时间： 2024-01-08 07:21:14

品牌	Logo	应用领域
STANFORD		放大器射频微波
页数	文件大小	规格书
3页	67K
描述
DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

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技术参数
数据手册

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SNA-200 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.91	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12.3 dB	最大输入功率 (CW)：	20 dBm
最大工作频率：	6500 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	最大电压驻波比：	1.5
Base Number Matches：	1

SNA-200 数据手册

Product Description

Stanford Microdevices’ SNA-200 is a GaAs monolithic

broadband amplifier (MMIC) in die form. This amplifier

provides 16dB of gain when biased at 50mA and 4V.

SNA-200

DC-6.5 GHz, Cascadable

GaAs MMIC Amplifier

External DC decoupling capacitors determine low frequency

response. The use of an external resistor allows for bias

flexibility and stability.

These unconditionally stable amplifiers are designed for use

as general purpose 50 ohm gain blocks. Also available in

packaged form (SNA-276, -286 & -287), its small size

(0.33mm x 0.33mm) and gold metallization make it an ideal

choice for use in hybrid circuits.

The SNA-200 is available in gel paks at 100 devices per

container.

Product Features

•Cascadable 50 Ohm Gain Block

• 16dB Gain, +14dBm P1dB

• 1.5:1 Input and Output VSWR

•Operates From Single Supply

• Chip Back Is Ground

Output Power vs. Frequency

dBm

Applications

0.5

1.5

GHz

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

Electrical Specifications at Ta = 25° C

P a r a m e t e r s : T e s t C o n d it io n s :

S y m b o l

U n it s

M in .

T y p .

M a x .

= 5 0 m A , Z ₀= 5 0 O h m s

0 .1 - 2 .0 G H z

2 .0 - 4 .0 G H z

4 .0 - 6 .5 G H z

d B

1 5 .0

1 4 .0

1 3 .0

1 6 .0

1 5 .0

1 4 .0

S m a ll S ig n a l P o w e r G a in

G a in F la tn e s s

3 d B B a n d w id th

0 .1 - 4 .0 G H z

d B

G H z

d B m

d B

+ /1 .0

6 .5

B W 3 d B

P _{1 d B}

O u tp u t P o w e r a t 1 d B C o m p re s s io n

N o is e F ig u r e

2 .0 G H z

1 4 .0

5 .5

N F

2 .0 G H z

6 .0

V S W R

In p u t/O u tp u t

0 .1 - 6 .5 G H z

1 .5 :1

IP ₃

T h ir d O r d e r In te r c e p t P o in t

G r o u p D e la y

2 .0 G H z

d B m

p s e c

2 7 .0

1 0 0

T _D

IS O L

V _D

R e v e r s e Is o la tio n

D e v ic e V o lta g e

0 .1 - 6 .5 G H z

d B

2 0

4 .0

3 .5

4 .5

d G /d T

d V /d T

D e v ic e

Te m p e ra tu r e C o e ffic ie n t

- 0 .0 0 1 8

- 4 .0

a in

/d e g C

d B

D e v ic e V o lta g e Te m p e ra tu r e

C o e ffic ie n t

m V /d e g C

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

5-21

12 3

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