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SNA-300 PDF预览

SNA-300

更新时间: 2024-11-29 03:31:31
品牌 Logo 应用领域
SIRENZA 放大器
页数 文件大小 规格书
3页 213K
描述
DC-3 GHz, Cascadable GaAs MMIC Amplifier

SNA-300 数据手册

 浏览型号SNA-300的Datasheet PDF文件第2页浏览型号SNA-300的Datasheet PDF文件第3页 
SNA-300  
DC-3 GHz, Cascadable  
GaAs HBT MMIC Amplifier  
Product Description  
Sirenza Microdevices’ SNA-300 is a GaAs monolithic broad-  
band amplifier (MMIC) in die form. At 1950 MHz, this amplifier  
provides 22dB of gain when biased at 35mA .  
These unconditionally stable amplifiers are designed for use  
as general purpose 50 ohm gain blocks. Its small size  
(0.350mm x 0.345mm) and gold metallization make it an ideal  
choice for use in hybrid circuits. The SNA-300 is 100% DC  
tested and sample tested for RF performance.  
Product Features  
External DC decoupling capacitors determine low frequency  
response. The use of an external resistor allows for bias  
flexibility and stability.  
•Cascadable 50 Ohm Gain Block  
• 22dB Gain, +10dBm P1dB  
• 1.5:1 Input and Output VSWR  
• Operates From Single Supply  
• Through wafer via for ground  
The SNA-300 is supplied in gel paks at 100 devices per pak.  
Also available in packaged form (SNA-376 & SNA-386)  
Output Power vs. Frequency  
12  
11  
Applications  
dBm  
10  
• Broadband Driver Amplifier  
• IF Amplifier or gain stage for VSAT, LMDS,  
WLAN, and Cellular Systems  
9
8
0.1  
0.5  
1
1.5  
2
4
6
8
10  
GHz  
Symbol  
Parameter  
Units Frequency Min. Typ. Max.  
dB  
dB  
dB  
850 MHz  
1950 MHz  
2400 MHz  
23.0  
22.0  
21.5  
Gp  
Small Signal Power Gain [2]  
20.5  
20.0  
23.5  
23.0  
BW 3dB 3dB Bandwidth  
GHz  
dBm  
3.0  
P1dB  
OIP3  
Output Power at 1dB Compression [2]  
Output Third Order Intercept Point [2]  
1950 MHz  
1950 MHz  
8.0  
10.0  
dBm  
20.0  
23.0  
NF  
RL  
Noise Figure  
Input / Output Return Loss  
dB  
dB  
dB  
V
1950 MHz  
1950  
0.1-3.0 GHz  
4.0  
11.7  
20.0  
3.7  
ISOL Reverse Isolation  
VD  
ID  
Device Operating Voltage [1]  
Device Operating Current [1]  
3.3  
4.1  
mA  
30.0 35.0  
-0.003  
40.0  
dG/dT Device Gain Temperature Coefficient  
TH, j-b Thermal Resistance (junction to backside)  
VS = 8 V ID = 35 mA Typ.  
RBIAS = 120 Ohms TL = 25ºC, ZS = ZL = 50 Ohms, [1] 100% DC tested, [2] Sample tested  
dB/°C  
R
°C/W  
260.0  
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of  
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are  
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..  
All worldwide rights reserved.  
303 South Technology Court  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-102432 Rev B  
1

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