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SNA-300 PDF预览

SNA-300

更新时间： 2024-11-28 22:21:35
品牌 Logo 应用领域
STANFORD 放大器
页数 文件大小 规格书
3页 66K
描述
DC-3 GHz, Cascadable GaAs MMIC Amplifier

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SNA-300 数据手册

 浏览型号SNA-300的Datasheet PDF文件第2页浏览型号SNA-300的Datasheet PDF文件第3页 
Product Description  
SNA-300  
Stanford Microdevices’ SNA-300 is a GaAs monolithic broad-  
band amplifier (MMIC) in die form. This amplifier provides  
22dB of gain when biased at 35mA and 4V.  
DC-3 GHz, Cascadable  
GaAs MMIC Amplifier  
External DC decoupling capacitors determine low frequency  
response. The use of an external resistor allows for bias  
flexibility and stability.  
These unconditionally stable amplifiers are designed for use  
as general purpose 50 ohm gain blocks. Also available in  
packaged form (SNA-376, -386 & -387), its small size (0.33mm  
x 0.33mm) and gold metallization make it an ideal choice for  
use in hybrid circuits.  
The SNA-300 is available in gel paks at 100 devices per  
container.  
Product Features  
• Cascadable 50 Ohm Gain Block  
• 22dB Gain, +10dBm P1dB  
• 1.5:1 Input and Output VSWR  
•Operates From Single Supply  
• Chip Back is Ground  
Output Power vs. Frequency  
12  
11  
10  
dBm  
9
8
Applications  
• Narrow and Broadband Linear Amplifiers  
• Commercial and Industrial Applications  
0.1  
0.5  
1
1.5  
2
4
6
8
10  
GHz  
Electrical Specifications at Ta = 25C  
P a r a m e t e r s : T e s t C o n d i t io n s :  
Id 3 5 m A , 5 0 O h m s  
S y m b o l  
U n it s  
M i n .  
T y p .  
M a x .  
=
Z
=
0
f
f
f
=
=
=
0 . 1 - 1 . 0 G H z  
1 . 0 - 2 . 0 G H z  
2 . 0 - 3 . 0 G H z  
d B  
d B  
d B  
2 1 . 0  
2 0 . 0  
1 9 . 0  
2 3 . 0  
2 2 . 0  
2 1 . 0  
S m a ll S ig n a l P o w e r G a in  
G
P
G a in F la tn e s s  
3 d B B a n d w id th  
f
=
0 . 1 - 3 . 0 G H z  
d B  
+ /- 1 . 5  
3 . 0  
G
F
B W 3 d B  
G H z  
O u tp u t P o w e r a t 1 d B C o m p r e s s io n  
N o is e F ig u r e  
f
=
2 . 0 G H z  
d B m  
d B  
1 0 . 0  
P
1 d B  
N F  
f
f
=
=
2 . 0 G H z  
4 . 0  
5 . 0  
V S W R  
In p u t  
/
O u tp u t  
0 . 1 - 3 . 0 G H z  
1 . 5 : 1  
T h ir d O r d e r In te r c e p t P o in t  
G r o u p D e la y  
f
=
2 . 0 G H z  
d B m  
2 3 . 0  
1 0 0  
IP  
3
f
f
=
=
2 . 0 G H z  
p s e c  
T
D
IS O L  
V D  
R e v e r s e Is o la tio n  
0 . 1 - 3 . 0 G H z  
d B  
V
2 2 . 0  
4 . 0  
D e v ic e V o lta g e  
3 . 5  
4 . 5  
d G /d T  
d V /d T  
D e v ic e G a in T e m p e r a tu r e C o e ff ic ie n t  
D e v ic e V o lta g e T e m p e r a tu r e C o e ffic ie n t  
d B /d e g C  
m V /d e g C  
- 0 . 0 0 3  
- 4 . 0  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
5-37  
123

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