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ST24E16M3 PDF预览

ST24E16M3

更新时间: 2024-10-01 03:43:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
16页 118K
描述
2KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

ST24E16M3 数据手册

 浏览型号ST24E16M3的Datasheet PDF文件第2页浏览型号ST24E16M3的Datasheet PDF文件第3页浏览型号ST24E16M3的Datasheet PDF文件第4页浏览型号ST24E16M3的Datasheet PDF文件第5页浏览型号ST24E16M3的Datasheet PDF文件第6页浏览型号ST24E16M3的Datasheet PDF文件第7页 
ST24E16  
ST25E16  
2
16 Kbit Serial I C EEPROM with Extended Addressing  
COMPATIBLE with I2C EXTENDED  
ADDRESSING  
TWO WIRE SERIAL INTERFACE,  
SUPPORTS 400kHz PROTOCOL  
1 MILLION ERASE/WRITE CYCLES, OVER  
the FULL SUPPLY VOLTAGE RANGE  
8
8
40 YEARS DATA RETENTION  
SINGLE SUPPLY VOLTAGE  
1
1
– 4.5V to 5.5V for ST24E16 version  
– 2.5V to 5.5V for ST25E16 version  
WRITE CONTROL FEATURE  
PSDIP8 (B)  
0.25mm Frame  
SO8 (M)  
150mil Width  
BYTE and PAGE WRITE (up to 16 BYTES)  
BYTE, RANDOM and SEQUENTIAL READ  
MODES  
SELF TIMED PROGRAMING CYCLE  
Figure 1. Logic Diagram  
AUTOMATIC ADDRESS INCREMENTING  
ENHANCED ESD/LATCH UP  
PERFORMANCES  
V
DESCRIPTION  
CC  
The ST24/25E16 are 16 Kbit electrically erasable  
programmable memories (EEPROM), organized  
as 8 blocks of 256 x8 bits. It is manufactured in  
STMicroelectronics’s Hi-Endurance Advanced  
CMOS technology which guarantees an endur-  
ance of one million erase/write cycles over the full  
supply voltage range, and a data retention of over  
40 years. The ST25E16 operates with a power  
supply value as low as 2.5V.  
3
E0-E2  
SDA  
ST24E16  
ST25E16  
SCL  
WC  
Table 1. Signal Names  
V
SS  
E0 - E2  
SDA  
SCL  
WC  
Chip Enable Inputs  
Serial Data Address Input/Output  
Serial Clock  
AI01102B  
Write Control  
VCC  
Supply Voltage  
VSS  
Ground  
February 1999  
1/16  

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