Datasheet > ST2315SRG

ST2315SRG

更新时间： 2024-09-28 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	218K
描述
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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ST2315SRG 数据手册

ST2315SRG

P Channel Enhancement Mode MOSFET

-4.0A

DESCRIPTION

ST2315SRG is the P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23

ꢀ

-20V/-4.0A, R_DS(ON)= 40m-ohm (Typ.)

@VGS = -4.5V

-20V/-3.0A, R_DS(ON)= 60m-ohm

@VGS = -2.5V

-20V/-2.0A, RDS(ON)= 90m-ohm

@VGS=-1.8V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

05YA

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2315SRG 2010. V1

12 3 4 5 6

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