ST1200-D10

更新时间： 2024-02-11 04:30:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		存储内存集成电路可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
2页	27K
描述
Memory Card IC 256 bit OTP EPROM with Lock-Out

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技术参数
数据手册

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ST1200-D10 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
Base Number Matches：	1

ST1200-D10 数据手册

ST1200

Memory Card IC

256 bit OTP EPROM with Lock-Out

DATA BRIEFING

■ 256 x 1 bit Organisation

■ 96 bits Protected in Write Mode By Lock-Out

Fuse

■ 5 V Power Supply (V ) and 21 V Programming

Voltage (V )

■ 85 mW in Read Mode

■ Power On Reset

■ Very High Reliability Level

Micromodule (D10)

■ Standard Delivery: Wafer Form and

Micromodule Package

DESCRIPTION

The ST1200 is a 256 bit OTP (one time program-

mable) EPROM, organized as 256 x 1, manufac-

tured using ST’s highly reliable and well proven

NMOS technology.

The security mechanism, called Lock-Out, allows

the user to inhibit, in write mode, the access to a

memory section of 96 bits. Thus, by blowing a

polysilicon fuse, the address bits 0 to 95 can be

protected against write.

The 9th bit of the ST1200 is set to a logical “1” for

device identification purposes. In order to avoid

any modification, ST has mask-programmed this

bit to the logic “1” state.

Wafer

Figure 1. Logic Diagram

Table 1. Signal Names

Function code

Fuse control

Data Output

FUS

OUT

FUS

ST1200

Strobe input

- validates function codes

- in programming mode used as a

programming pulse

Programming voltage (must be preset

before programming and held after)

Power

GND

Ground

GND

DS120005

October 1999

1/2

Complete data available under NDA.

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