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SSR2010Z PDF预览

SSR2010Z

更新时间: 2024-09-25 03:30:59
品牌 Logo 应用领域
SSDI 整流二极管局域网
页数 文件大小 规格书
2页 56K
描述
20 AMPS 100 VOLTS CHOTTKY RECTIFER

SSR2010Z 技术参数

生命周期:Active零件包装代码:TO-254
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.82 VJEDEC-95代码:TO-254
JESD-30 代码:S-XSFM-P3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:20 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR2010Z 数据手册

 浏览型号SSR2010Z的Datasheet PDF文件第2页 
SSR2008M, SSR2008Z  
SSR2009M, SSR2009Z  
SSR2010M, SSR2010Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
20 AMPS  
100 VOLTS  
SCHOTTKY  
RECTIFER  
Designer’s Data Sheet  
FEATURES:  
PIV: 100 Volts  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
·
·
·
·
·
·
·
·
·
TO-254  
TO-254Z  
Guard Ring for Overvoltage Protection  
Isolated Hermetically Sealed Package  
Available in Glass or Ceramic Seal Packages  
Custom Lead Forming Available  
Eutectic Die Attach  
175°C Operating Junction Temperature  
·
TX, TXV, and Space Level Screening Available  
Available in the Following Configurations:  
TO-254: SSR2008M, SSR2008MUB, SSR2008MDB, SSR2009M, SSR2009MUB, SSR2009MDB,  
SSR2010M, SSR2010MUB, SSR2010MDB.  
TO-254Z:  
SSR2008Z, SSR2008ZUB, SSR2008ZDB, SSR2009Z, SSR2009ZUB, SSR2009ZDB,  
SSR2010Z, SSR2010ZUB, SSR2010ZDB  
2/  
MAXIMUM RATINGS  
Symbol  
Value  
Unit  
Volts  
Amps  
Peak Repetitive Reverse Voltage and  
DC Blocking Voltage  
SSR2008M & Z  
SSR2009M & Z  
SSR2010M & Z  
VRRM  
VRWM  
VR  
80  
90  
100  
Average Rectified Forward Current 1/ 3/  
IO  
20  
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)  
3/  
Peak Surge Current  
IFSM  
TOP & Tstg  
RqJC  
Amps  
°C  
300  
-65 to +175  
1.0  
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)  
Operating and Storage Temperature  
3/  
Maximum Thermal Resistance  
°C/W  
(Junction to Case)  
NOTE:  
1/ Derate Linearly at 1A/°C for TC > 155°C.  
2/ All Electrical Characteristics @25°C, Unless Otherwise Specified.  
3/ pins 2 and 3 externally connected together  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RS0091H  
DOC  

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