Datasheet > SSR1009MUBTXV

SSR1009MUBTXV

更新时间： 2024-09-26 07:58:11

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	130K
描述
Rectifier Diode,

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数据手册

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SSR1009MUBTXV 数据手册

SSR1008M, SSR1008Z

SSR1009M, SSR1009Z

SSR1010M, SSR1010Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information ^1/

10 AMPS

80 - 100 VOLTS

SCHOTTKY RECTIFIER

SSR1008 __ __ __

SSR1009 __ __ __

SSR1010 __ __ __

│

└

│

└

└ Screening

__ = Not Screened

FEATURES:

TX = TX Level

TXV = TXV Level

S = S Level

•

Extremely Low Forward Voltage Drop

Low Reverse Leakage Current

Hermetically Sealed Package

Guard Ring for Overvoltage Protection

Eutectic Die Attach

Lead Options

__ = Straight Leads

DB = Bent Down

UB = Bent Up

175^°C Operating Junction Temperature

TX, TXV, or Space Level Screening

Available

Package

M = TO-254

Z = TO-254Z

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

SSR1008

SSR1009

SSR1010

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

Volts

100

Average Rectified Output Current ^3/

(Resistive Load, 60Hz, Sine Wave, TA=25^°C)

Peak Surge Current ^3/

I_O

Amps

I_FSM

200

(8.3 ms Pulse, Half Sine Wave, superimposed on I_O, allow

junction to reach equilibrium between pulses, TA=25^°C)

T_OP& T_STG

R_θJC

-65 to +175

2.0

^°C

Operating and Storage Temperature

Maximum Thermal Resistance ^3/

^°C/W

Junction to Case

TO-254

TO-254Z

NOTES:

1/ For ordering information, price, and availability- Contact Factory.

2/ Screening based on MIL-PRF-19500. Screening flows available

on request.

3/ For optimal performance, connect leads 2 & 3 together.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0205L

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