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SSP7N60BJ69Z PDF预览

SSP7N60BJ69Z

更新时间: 2024-02-05 17:21:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 908K
描述
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

SSP7N60BJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.69
雪崩能效等级(Eas):420 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):7 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSP7N60BJ69Z 数据手册

 浏览型号SSP7N60BJ69Z的Datasheet PDF文件第1页浏览型号SSP7N60BJ69Z的Datasheet PDF文件第2页浏览型号SSP7N60BJ69Z的Datasheet PDF文件第3页浏览型号SSP7N60BJ69Z的Datasheet PDF文件第5页浏览型号SSP7N60BJ69Z的Datasheet PDF文件第6页浏览型号SSP7N60BJ69Z的Datasheet PDF文件第7页 
Typical Characteristics (Continued)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.2  
1.1  
1.0  
Notes :  
0.9  
1. VGS = 0 V  
Notes :  
2. ID = 250 μA  
1. VGS = 10 V  
2. ID = 3.5 A  
0.8  
-100  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
T, Junction Temperature [oC]  
J
Figure 7. Breakdown Voltage Variation  
vs Temperature  
Figure 8. On-Resistance Variation  
102  
101  
100  
102  
Operation in This Area  
is Limited by R DS(on)  
Operation in This Area  
is Limited by R DS(on)  
100 µs  
10 µs  
100 µs  
101  
100  
1 ms  
1 ms  
10 ms  
10 ms  
100 ms  
DC  
DC  
-1  
10  
-1  
10  
Notes :  
Notes :  
1. TC = 25 oC  
1. TC = 25 oC  
2. T = 150 oC  
2. T = 150 oC  
J
J
3. Single Pulse  
3. Single Pulse  
-2  
-2  
10  
10  
0
1
10  
102  
103  
0
1
10  
10  
102  
103  
10  
VDS, Drain-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 9-1. Maximum Safe Operating Area  
for SSP7N60B  
Figure 9-2. Maximum Safe Operating Area  
for SSS7N60B  
8
6
4
2
0
25  
50  
75  
100  
125  
150  
TC, Case Temperature [  
]
Figure 10. Maximum Drain Current  
vs Case Temperature  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

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