Datasheet > SSF2102_15

SSF2102_15

更新时间： 2024-09-25 01:22:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	67K
描述
N-Channel Enhancement Mode Power MOSFET

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SSF2102_15 数据手册

SSF2102

2.1A , 20V , R_DS(ON)60 mΩ

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-323

The SSF2102 provide the designer with the best

combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The SOT-323 package

is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications

such as DC/DC converters.

Top View

C B

FEATURES

ꢀ

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

Millimeter

Min. Max.

0.1 REF.

REF.

Min.

Max.

2.20

2.45

1.4

1.80

1.1

0.525 REF.

0.08

0.25

0.80

1.20

0.15

1.10

1.40

0.40

0.8 TYP.

0.65 TYP.

MARKING

TS2

Top View

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-323

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

Continuous Drain Current

I_D

2.1

Continuous Source-Drain Current(Diode Conduction)

Maximum Power Dissipation

I_S

0.6

P_D

200

625

Thermal Resistance from Junction to Ambient (t≤5s)

Operating Junction & Storage Temperature

R_θJA

T_J, T_STG

°C / W

°C

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Jan-2014 Rev.A

Page 1 of 2

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