SS32 - S310
0.280 (7.112)
0.260 (6.604)
Features
0.124 (3.150)
0.108 (2.743)
• Metal to silicon rectifiers, majority
carrier conduction.
0.245 (6.223)
0.220 (5.588)
2
1
• Low forward voltage drop.
• Easy pick and place.
0.320 (8.128)
0.305 (7.747)
SMC/DO-214AB
0.103 (2.616)
0.079 (2.007)
• High surge current capability.
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
@ TA = 75°C
3.0
A
Peak Forward Surge Current
if(surge)
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient**
100
A
PD
2.27
18
55
W
mW/°C
°C/W
RθJA
RθJC
Tstg
TJ
Thermal Resistance, Junction to Case
Storage Temperature Range
17
°C/W
°C
-55 to +150
-55 to +150
Operating Junction Temperature
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
32
20
14
20
33
30
21
30
34
40
28
40
35
36
60
42
60
38
80
56
80
39
90
63
90
310
100
70
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
50
35
50
V
V
100
V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C
0.5
mA
mA
mV
20
10
@ rated VR
TA = 100°C
Maximum Forward Voltage @ 3.0 A
500
750
850
1999 Fairchild Semiconductor Corporation
SS32 - S310, Rev. B1