Datasheet > SS24-E35BT

SS24-E35BT

更新时间： 2024-09-29 01:19:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	90K
描述
Surface Mount Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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SS24-E35BT 数据手册

SS22 thru SS26

Vishay General Semiconductor

www.vishay.com

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AA (SMB)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

20 V to 60 V

75 A

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

V_F

0.50 V, 0.70 V

125 °C, 150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS22

SS23

SS24

SS25

SS26

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Max. average forward rectified current at T_L(fig. 1)

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

V_C

Non-repetitive avalanche energy at T_A= 25 °C,

I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 k

8.0

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/µs

°C

- 65 to + 125

- 65 to + 150

T_STG

- 65 to + 150

°C

Revision: 27-Mar-12

Document Number: 88748

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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