RR
UMW SS12F THRU SS120F
UMW
20V-200V 1A
FEATURES
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Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
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MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
SS12F
20
SS14F
40
SS16F
60
SS18F
80
SS110F SS112F
SS115F
150
SS120F
200
Units
V
Parameter
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
100
70
120
84
Maximum RMS voltage
14
28
42
56
105
140
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
40
60
80
100
120
150
200
V
IF(AV)
1.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
IFSM
VF
IR
40
30
A
V
Max Instantaneous Forward Voltage at 1 A
0.55
0.70
0.85
0.90
Maximum DC Reverse Current Ta = 25°C
0.3
10
0.2
5
0.1
2
mA
at Rated DC Reverse Voltage
Typical Junction Capacitance(1)
Typical Thermal Resistance(2)
Ta =100°C
pF
°C/W
°C
110
80
Cj
95
RθJA
Tj
Operating Junction Temperature Range
Storage Temperature Range
-55 ~ +150
-55 ~ +150
Tstg
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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友台半导体有限公司