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SR2030CT-G PDF预览

SR2030CT-G

更新时间: 2024-10-01 12:47:07
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
3页 71K
描述
Schottky Barrier Rectifiers

SR2030CT-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 V最大非重复峰值正向电流:200 A
最高工作温度:150 °C最大输出电流:20 A
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SR2030CT-G 数据手册

 浏览型号SR2030CT-G的Datasheet PDF文件第2页浏览型号SR2030CT-G的Datasheet PDF文件第3页 
Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SR2030CT-G Thru. SR20150CT-G  
Voltage: 30 to 150 V  
Current: 20.0 A  
RoHS Device  
Features  
TO-220AB  
-Metal of silicon rectifier, majority carrier conduction.  
-Guard ring for transient protection.  
-Low power loss, high efficiency.  
0.187(4.80)  
0.135(3.44)  
0.103(2.62)  
0.173(4.40)  
0.055(1.40)  
0.047(1.20)  
0.153(3.90)  
0.146(3.70)  
0.413(10.50)  
0.347( 9.50)  
-High current capability, low VF.  
-High surge capacity.  
0.270(6.90)  
0.230(5.80)  
0.610(15.50)  
0.583(14.80)  
-For use in low voltage, high frequency inverters,  
free wheeling,and polarity protection applications.  
Mechanical Data  
0.177  
(4.5)  
0.583(14.80)  
0.531(13.50)  
0.057(1.45)  
0.045(1.14)  
MAX  
-Case: TO-220AB, molded plastic  
-Epoxy: UL 94-V0 rate flame retardant.  
-Polarity: As marked on the body.  
-Mounting position: Any  
0.024(0.60)  
0.012(0.30)  
0.102(2.60)  
0.091(2.30)  
0.043(1.10)  
0.032(0.80)  
0.138  
(3.50)  
MAX  
-Weight: 2.24 grams  
Dimensions in inches and (millimeter)  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
SR  
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G  
SR  
SR  
SR  
SR  
SR  
SR  
Symbol  
Parameter  
Unit  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
150  
105  
150  
V
V
V
V
Maximum DC blocking voltage  
V
DC  
100  
Maximum average forward rectified  
I
(AV)  
20.0  
200  
A
current ( See Fig.1 )  
@ Tc= 95°C  
Peak forward surage current ,8.3ms single  
half sine-wave super imposed on rated load  
(JEDEC method)  
IFSM  
A
V
Peak forward voltage at 10.0A DC (Note 1)  
0.55  
0.70  
0.85  
0.95  
V
F
@ TJ= 25°C  
1.0  
50  
Maximum DC Reverse Current  
at Rate DC Blocking Voltage  
IR  
mA  
@ TJ= 100°C  
Typical junction capacitance (Note2)  
Typical thermal resistance (Note3)  
Operating temperature range  
Storage temperature range  
pF  
°C/W  
°C  
C
J
600  
2.0  
R
θJC  
TJ  
-55 to +150  
-55 to +150  
TSTG  
°C  
NOTES:  
1. 300us pulse width,2% duty cycle.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance junction to case.  
REV:A  
Page 1  
QW-BB056  
Comchip Technology CO., LTD.  

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