5秒后页面跳转
SR160 PDF预览

SR160

更新时间: 2024-09-30 22:42:47
品牌 Logo 应用领域
WTE 二极管瞄准线
页数 文件大小 规格书
3页 52K
描述
1.0A SCHOTTKY BARRIER RECTIFIER

SR160 数据手册

 浏览型号SR160的Datasheet PDF文件第2页浏览型号SR160的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
SR120 – SR160  
1.0A SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
!
High Current Capability  
A
B
A
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
C
D
Mechanical Data  
DO-41  
Min  
Dim  
A
Max  
!
!
Case: Molded Plastic  
25.4  
4.06  
0.71  
2.00  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
5.21  
0.864  
2.72  
C
!
!
!
!
D
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
SR120  
20  
SR130  
30  
SR140  
SR150  
50  
SR160  
60  
Unit  
VRRM  
VRWM  
VR  
40  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
14  
21  
28  
35  
42  
V
A
Average Rectified Output Current (Note 1) @TL = 100°C  
1.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
40  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.50  
110  
0.70  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
10  
mA  
Typical Junction Capacitance (Note 2)  
Cj  
80  
pF  
K/W  
K/W  
°C  
Typical Thermal Resistance Junction to Lead  
RJL  
15  
50  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SR120 - SR160  
1 of 3  
© 2002 Won-Top Electronics  

与SR160相关器件

型号 品牌 获取价格 描述 数据表
SR1602 NJSEMI

获取价格

TECHNICAL SPECIFICATIONS OF 16.0AMP SCHOTTKY BARRIER RECTIFIERS
SR1603 NJSEMI

获取价格

TECHNICAL SPECIFICATIONS OF 16.0AMP SCHOTTKY BARRIER RECTIFIERS
SR1604 NJSEMI

获取价格

TECHNICAL SPECIFICATIONS OF 16.0AMP SCHOTTKY BARRIER RECTIFIERS
SR1605 NJSEMI

获取价格

TECHNICAL SPECIFICATIONS OF 16.0AMP SCHOTTKY BARRIER RECTIFIERS
SR1606 NJSEMI

获取价格

TECHNICAL SPECIFICATIONS OF 16.0AMP SCHOTTKY BARRIER RECTIFIERS
SR160H01 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41
SR160H02 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41
SR160H02-1 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41
SR160H02-2 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41
SR160H02-5 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-41