SR1150 - SR1200
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 150 - 200V
CURRENT: 1.0 A
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
!
!
High Current Capability
A
B
A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Inverters, Free Wheeling, and Polarity
C
Protection Applications
D
Mechanical Data
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
DO-41
Min
Dim
A
Max
25.40
4.06
¾
!
!
!
!
B
5.21
0.864
2.72
C
0.71
Marking: Type Number
D
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Unit
SR1150
SR1200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Volts
Volts
Volts
150
105
150
200
140
200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
1.0
Amp
IFSM
40.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
Maximum instantaneous forward voltage at 1.0A
0.95
0.85
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
80
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +150
TJ,
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
1 of 2
www.sunmate.tw