生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPFM9152RK | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.14ohm, 1-Element, P-Channel, Silicon, Met |
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SPFM9152RM | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.14ohm, 1-Element, P-Channel, Silicon, Met |
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SPFM9155RK | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9155RM | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9163RK | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 100V, 0.095ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9163RM | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 100V, 0.095ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9165RK | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.086ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9165RM | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.086ohm, 1-Element, P-Channel, Silicon, Me |
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SPFM9231RK | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.32ohm, 1-Element, P-Channel, Silicon, Meta |
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SPFM9231RM | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.32ohm, 1-Element, P-Channel, Silicon, Meta |
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