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SPBX2N60S5 PDF预览

SPBX2N60S5

更新时间: 2024-09-21 21:20:39
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
5页 57K
描述
Power Field-Effect Transistor, 11.3A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, 3 PIN

SPBX2N60S5 技术参数

生命周期:Obsolete零件包装代码:TO-263
包装说明:TO-263, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.38
雪崩能效等级(Eas):340 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):11.3 A
最大漏极电流 (ID):11.3 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):22.6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

SPBX2N60S5 数据手册

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SPPX2N60S5  
SPBX2N60S5  
Target data sheet  
Cool MOS Power Transistor  
· N-Channel  
· Enhancement mode  
· Ultra low gate charge  
· Avalanche rated  
· dv/dt rated  
1
2
3
· 150°C operating temperature  
G
D
S
Type  
V
I
R
Marking  
Package  
Ordering Code  
DS  
D
DS(on)  
SPPX2N60S5  
SPBX2N60S5  
600 V 11.3 A 380 mW X2N60S5  
P-TO220-3-1  
P-TO263-3-2  
-
-
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
V
Drain source voltage  
Continuous drain current  
V
600  
DSS  
A
I
D
T = 25 °C  
11.3  
7.1  
C
T = 100 °C  
C
Pulsed drain current  
I
22.6  
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
340  
mJ  
AS  
I = 11.3 A, V = 50 V, R = 25 W  
D
DD  
GS  
tbd  
tbd  
6
A
Avalanche current (periodic, limited by T  
)
I
jmax  
AR  
Avalanche energy (10 kHz, limited by T  
Reverse diode dv/dt  
)
E
mJ  
jmax  
AR  
KV/µs  
dv/dt  
I = 11.3 A, V <V  
, di/dt = 100 A/µs,  
S
DS DSS  
T
= 150 °C  
jmax  
Gate source voltage  
V
P
±20  
125  
V
GS  
tot  
j
Power dissipation, T = 25 °C  
W
°C  
C
Operating temperature  
T
T
-55 ...+150  
Storage temperature  
-55 ... +150  
55/150/56  
stg  
IEC climatic category; DIN IEC 68-1  
Semiconductor Group  
1
21/Oct/1998  

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