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SP1N5809CB PDF预览

SP1N5809CB

更新时间： 2024-09-30 15:52:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 207K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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中文翻译

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SP1N5809CB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.58其他特性：HIGH RELIABILITY
应用：ULTRA FAST RECOVERY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LALF-W2
JESD-609代码：e0最大非重复峰值正向电流：125 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified参考标准：MIL-19500/742
最大反向恢复时间：0.03 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SP1N5809CB 数据手册

 浏览型号SP1N5809CB的Datasheet PDF文件第2页浏览型号SP1N5809CB的Datasheet PDF文件第3页 
1N5807CB thru 1N5811CB  
VOIDLESS-HERMETICALLY-SEALED  
ULTRAFAST RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and  
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-  
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts  
are hermetically sealed with voidless-glass construction using an internal “Category III”  
metallurgical bond. These devices are also available in surface mount MELF package  
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru  
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and  
lower current ratings with various recovery time speed requirements including standard, fast  
and ultrafast device types in both through-hole and surface mount packages.  
“E” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
• Popular JEDEC registered 1N5807 to 1N5811 series  
• Voidless hermetically sealed glass package  
• Extremely robust construction  
• Triple-layer passivation  
• Internal “Category III” Metallurgical bonds  
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742  
• Ultrafast recovery 6 Amp rectifier series 50 to 150 V  
• Military and other high-reliability applications  
• Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
• High forward surge current capability  
• Low thermal resistance  
• Further screening options are available for JANS in  
• Controlled avalanche with peak reverse power  
accordance with MIL-PRF-19500/742 by using a “SP” prefix  
capability  
• Surface mount equivalents also available in a square end-  
cap MELF configuration with “US” suffix (see separate data  
sheet for 1N5807CBUS thru 1N5811CBUS)  
• Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Junction Temperature: -65oC to +175oC  
• Storage Temperature: -65oC to +175oC  
• Average Rectified Forward Current (IO): 6 A @ TL = 75ºC  
at 3/8 inch lead length (see note 1)  
•
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs  
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)  
over Copper.  
•
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 750 mg  
• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)  
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time  
• Forward Surge Current (8.3 ms half sine) 125 Amps  
• Capacitance: 60 pF at 10 volts, f = 1 MHz  
• Solder temperature: 260ºC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING BREAKDOWN AVERAGE  
AVERAGE  
RECTIFIED RECTIFIED  
CURRENT CURRENT  
MAXIMUM  
FORWARD  
VOLTAGE  
@ 4 A  
(8.3 ms pulse)  
VF  
REVERSE  
CURRENT  
(MAX)  
SURGE  
CURRENT  
(MAX)  
REVERSE  
RECOVERY  
TIME (MAX)  
(NOTE 4)  
PEAK  
REVERSE  
VOLTAGE  
VOLTAGE  
(MIN.)  
@ 100μA  
TYPE  
I
I
@ V  
I
FSM  
(NOTE 3)  
O1  
O2  
RWM  
V
t
rr  
IR  
V
@TL=75ºC  
(Note 1)  
AMPS  
@TA=55ºC  
Note 2  
RWM  
BR  
VOLTS  
VOLTS  
VOLTS  
AMPS  
ns  
μA  
25oC  
0.875  
0.875  
0.875  
100oC 25oC 125oC  
0.800  
0.800  
0.800  
1N5807CB  
1N5809CB  
1N5811CB  
50  
100  
150  
60  
110  
160  
6.0  
6.0  
6.0  
3.0  
3.0  
3.0  
5
5
5
525  
525  
525  
125  
125  
125  
30  
30  
30  
NOTE 1: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.  
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where T  
does not exceed 175ºC  
)
J(max  
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals  
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min  
Copyright © 2007  
7-26-2007  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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