Datasheet > SP1N6080US

SP1N6080US

更新时间： 2024-10-01 09:24:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	135K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, D-5C, MELF-2

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SP1N6080US 数据手册

1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability

applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated

rectifiers (T_EC=70ºC) in different package sizes with working peak reverse

voltages from 50 to 150 volts are hermetically sealed using voidless-glass

construction and an internal “Category I” metallurgical bond. These devices

are also available in axial-lead package configurations for through-hole

mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru

1N6081). Microsemi also offers numerous other rectifier products to meet

higher and lower current ratings with various recovery time speed requirements

including standard, fast and ultrafast device types in both through-hole and

surface mount packages.

Package “A”

(or “D-5A”)

Package “E”

(or “D-5B”)

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular 1N6073US to 1N6081US series

Voidless hermetically-sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 50 to 150 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance for higher power

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Options for screening in accordance with MIL-PRF-

19500/503 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or SP prefix respectively , e.g.

MX6076, MV6079, SP6081, etc.

Controlled avalanche with peak reverse power

capability

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Axial-leaded equivalents also available (see separate

data sheet for 1N6073 thru 1N6081)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

Storage Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073US-6075US, 75 Amps for 1N6076US-6078US,

and 175 Amps for 1N6079US-6081US at 8.3 ms half-

sine wave

Average Rectified Forward Current (I_O) at T_EC= +70^oC:

1N6073US thru 1N6075US: 3.0 Amps

1N6076US thru 1N6078US: 6.0 Amps

1N6079US thru 1N6081US: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073US thru 1N6075US: 0.85 Amps

1N6076US thru 1N6078US: 1.3 Amps

1N6079US thru 1N6081US: 2.0 Amps

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead finish.

•

MARKING: None

•

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 1N6073 thru 1N6075: 193 mg

1N6076 thru 1N6078: 539 mg

1N6079 thru 1N6081: 1100 mg

•

See package dimensions and recommended pad

layouts on last page for all three package sizes

•

Thermal Resistance (R_θ_JEC): 13^oC/W for 1N6073US-

6075US, 8.5^oC/W for 1N6076US-6078US, and

5.0^oC/W for 1N6079US-6081US

Solder temperature: 260^oC for 10 s (maximum)

10-03-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与SP1N6080US相关器件

型号	品牌	获取价格	描述	数据表
SP1N6081US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, D-5C, MELF-2
SP1N6356	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6356E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6356E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6356TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6357	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6357E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SP1N6358E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SP1N6358E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SP1N6358TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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