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SOB2UV6482-125T-S PDF预览

SOB2UV6482-125T-S

更新时间: 2024-10-02 21:15:11
品牌 Logo 应用领域
富士通 - FUJITSU 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 137K
描述
Synchronous DRAM Module, 2MX64, 7.5ns, CMOS, PDMA144

SOB2UV6482-125T-S 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:DIMM, DIMM144,32针数:144
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:7.5 ns最大时钟频率 (fCLK):125 MHz
I/O 类型:COMMONJESD-30 代码:R-PDMA-N144
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:64端子数量:144
字数:2097152 words字数代码:2000000
最高工作温度:70 °C最低工作温度:
组织:2MX64输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIMM
封装等效代码:DIMM144,32封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:3.3 V
认证状态:Not Qualified刷新周期:2048
座面最大高度:25.4 mm最大待机电流:0.016 A
子类别:DRAMs最大压摆率:1.2 mA
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

SOB2UV6482-125T-S 数据手册

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March 1997  
Revision 2.1  
DATA SHEET  
SOB2UV6482-(67/84/100/125)T-S  
16MByte (2M x 64) CMOS  
Synchronous DRAM Module  
General Description  
The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as  
2M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.  
The module utilizes eight Fujitsu MB81117822A-(67/84/100/125) PFTN CMOS 2Mx8 synchronous dynamic RAMs in surface  
mount package (TSOP) on an epoxy laminated substrate. Each device is accompanied by a decoupling capacitor for improved  
noise immunity.  
A 256 Byte Serial EEPROM contains the module configuration information.  
Features  
• High Density: 16MByte  
• Cycle Time:  
• Low Power:  
8ns (125MHz), 10ns (100MHz), 12ns (84MHz), 15ns (67MHz)  
Active 4.3W (125MHz), 3.9W (100MHz), 3.6W (84MHz), 3.3W (67MHz)  
• LVTTL-compatible inputs and outputs  
• Separate power and ground planes to improve noise immunity  
• Single power supply of 3.3V±0.3V  
• Height: 1.000 inch  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Ratings  
-0.5 to +4.6  
10.4  
Unit  
V
Voltage on any pin relative to V  
V
P
SS  
T
Power Dissipation  
W
T
T
Operating Temperature  
Storage Temperate  
0 to +70  
-55 to +125  
±50  
°C  
°C  
mA  
opr  
T
stg  
OS  
I
Short Circuit Output Current  
RECOMMENDED DC OPERATING CONDITIONS  
(TA = 0 to +70 °C)  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
Max  
3.6  
0
Unit  
V
V
V
V
3.0  
0
3.3  
V
V
V
V
CC  
SS  
IH  
Ground  
0
-
V
+0.5  
Input High voltage  
Input Low voltage  
2.0  
-0.5  
CC  
-
0.8  
IL  
Fujitsu Microelectronics, Inc.  
1

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