Datasheet > 晶体管 > 小信号双极晶体管> SNXH800H120L7QDSG

SNXH800H120L7QDSG

更新时间： 2024-10-02 15:19:51

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
4页	90K
描述
Qdual3 1200 V 800 A Half Bridge IGBT Module for CAV

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中文翻译

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数据手册

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SNXH800H120L7QDSG 数据手册

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MPS6726

One Watt Amplifier

Transistors

PNP Silicon

http://onsemi.com

Features

• This is a Pb−Free Device*

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−30

Unit

Vdc

Adc

CEO

CBO

EBO

−40

EMITTER

−5.0

−1.0

Collector Current − Continuous

Total Device Dissipation @ T = 25°C

1.0

8.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

2.5

mW/°C

Derate above 25°C

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic

STRAIGHT LEAD

BULK PACK

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

MPS

6726

AYWWG

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

5000 Units / Bulk

MPS6726G

TO−92

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

August, 2010 − Rev. 4

MPS6726/D

12 3 4

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