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SNSS40600CF8T1G

更新时间： 2024-09-28 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
5页 103K
描述
双极晶体管，低饱和压，PNP，6.0 A，40 V

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中文翻译

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SNSS40600CF8T1G 技术参数

是否无铅： 不含铅生命周期：Active
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：7 weeks
风险等级：5.72JESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：NOT SPECIFIED
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SNSS40600CF8T1G 数据手册

 浏览型号SNSS40600CF8T1G的Datasheet PDF文件第2页浏览型号SNSS40600CF8T1G的Datasheet PDF文件第3页浏览型号SNSS40600CF8T1G的Datasheet PDF文件第4页浏览型号SNSS40600CF8T1G的Datasheet PDF文件第5页 
NSS40600CF8T1G  
40 V, 7.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
−40 VOLTS, 7.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 45 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
COLLECTOR  
1, 2, 3, 6, 7, 8  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• This is a Pb−Free Device  
4
MAXIMUM RATINGS (T = 25°C)  
A
BASE  
Rating  
Symbol  
Max  
−40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
5
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
EMITTER  
−40  
−7.0  
−6.0  
−7.0  
ChipFET]  
CASE 1206A  
STYLE 4  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
I
CM  
ESD  
HBM Class 3B  
MM Class C  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
VA M  
G
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
P
(Note 1)  
830  
6.7  
mW  
mW/°C  
A
D
Derate above 25°C  
VA = Specific Device Code  
M = Month Code  
Thermal Resistance,  
Junction−to−Ambient  
R
q
(Note 1)  
150  
°C/W  
JA  
G
= Pb−Free Package  
Total Device Dissipation, T = 25°C  
P
(Note 2)  
(Note 2)  
1.4  
11.1  
W
mW/°C  
A
D
Derate above 25°C  
PIN CONNECTIONS  
Thermal Resistance,  
Junction−to−Ambient  
R
q
90  
°C/W  
°C/W  
W
JA  
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
Thermal Resistance,  
Junction−to−Lead #1  
R
(Note 2)  
15  
q
JL  
Total Device Dissipation  
(Single Pulse < 10 sec)  
P
2.75  
Dsingle  
(Notes 2 & 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
NSS40600CF8T1G  
Package  
Shipping  
2
1. FR−4 @ 100 mm , 1 oz copper traces.  
2
2. FR−4 @ 500 mm , 1 oz copper traces.  
ChipFET  
3000/  
Tape & Reel  
3. Thermal response.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 − Rev. 0  
NSS40600CF8/D  
 
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中文翻译

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SNSS40600CF8T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS40600CF8T1G ONSEMI

完全替代

 40 V, 7.0 A, Low VCE(sat) PNP Transistor

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