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SN65LVCP418PAPT PDF预览

SN65LVCP418PAPT

更新时间: 2024-01-15 02:01:41
品牌 Logo 应用领域
德州仪器 - TI 电信集成电路电信电路PC
页数 文件大小 规格书
25页 1437K
描述
8-Channel Gigabit Signal Conditioning Buffer

SN65LVCP418PAPT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFP
包装说明:HTQFP-64针数:64
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.61
Samacsys Confidence:Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=606772PCB Footprint:https://componentsearchengine.com/footprint.php?partID=606772
Samacsys PartID:606772Samacsys Image:https://componentsearchengine.com/Images/9/SN65LVCP418PAPT.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/SN65LVCP418PAPT.jpgSamacsys Pin Count:65
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:QFP50P1200X1200X120-65NSamacsys Released Date:2017-01-12 12:59:53
Is Samacsys:N数据速率:4250000 Mbps
JESD-30 代码:S-PQFP-G64JESD-609代码:e4
长度:10 mm湿度敏感等级:3
功能数量:1端子数量:64
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:HTFQFP
封装形状:SQUARE封装形式:FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:TELECOM CIRCUIT
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10 mmBase Number Matches:1

SN65LVCP418PAPT 数据手册

 浏览型号SN65LVCP418PAPT的Datasheet PDF文件第1页浏览型号SN65LVCP418PAPT的Datasheet PDF文件第3页浏览型号SN65LVCP418PAPT的Datasheet PDF文件第4页浏览型号SN65LVCP418PAPT的Datasheet PDF文件第5页浏览型号SN65LVCP418PAPT的Datasheet PDF文件第6页浏览型号SN65LVCP418PAPT的Datasheet PDF文件第7页 
SN65LVCP418  
SLLS856JUNE 2009....................................................................................................................................................................................................... www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
LOGIC DIAGRAM  
ADDR1  
ADDR2  
I2C  
IF  
SCL  
SDA  
RESN  
I2C_EN  
EQ_0  
V
PRE  
2
BB  
R
T
0A  
0B  
0Y  
0Z  
EQ  
R
T
3-State_0  
EQ_1  
V
PRE  
2
BB  
R
T
1A  
1B  
1Y  
1Z  
EQ  
R
T
3-State_1  
EQ_2  
V
PRE  
2
BB  
R
T
2A  
2B  
2Y  
2Z  
EQ  
R
T
3-State_2  
V
EQ_3  
BB  
R
T
PRE  
2
3A  
3B  
3Y  
3Z  
EQ  
R
T
3-State_3  
V
EQ_4  
BB  
R
T
PRE  
2
4A  
4B  
4Y  
4Z  
EQ  
R
T
3-State_4  
V
EQ_5  
BB  
R
T
PRE  
2
5A  
5B  
5Y  
5Z  
EQ  
R
T
3-State_5  
V
EQ_6  
BB  
R
T
PRE  
2
6A  
6B  
6Y  
6Z  
EQ  
R
T
3-State_6  
V
EQ_7  
BB  
R
T
PRE  
2
7A  
7B  
7Y  
7Z  
EQ  
R
T
3-State_7  
A. VBB: Receiver input internal biasing voltage (allows ac coupling)  
B. RT: Internal 50-receiver termination (100-differential)  
2
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Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): SN65LVCP418  

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