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SMV2021-230 PDF预览

SMV2021-230

更新时间: 2024-01-18 03:28:10
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管变容二极管
页数 文件大小 规格书
2页 45K
描述
Variable Capacitance Diode, 22V, Silicon, Hyperabrupt

SMV2021-230 技术参数

生命周期:Obsolete包装说明:O-CRDB-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.16
最小击穿电压:22 V配置:SINGLE
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:O-CRDB-F2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
最大功率耗散:0.25 W认证状态:Not Qualified
最小质量因数:500最大重复峰值反向电压:22 V
子类别:Varactors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
变容二极管分类:HYPERABRUPTBase Number Matches:1

SMV2021-230 数据手册

 浏览型号SMV2021-230的Datasheet PDF文件第2页 
Silicon Low Capacitance  
Hyperabrupt Junction Varactor Diodes  
SMV2019 to SMV2023  
Features  
Octave Frequency Tuning from 0 to 10 Volts  
Good Linearity Tuning Ratio Without  
Compensation Network  
Offered in Package Styles Suitable for a Wide  
Range of Applications  
Description  
Maximum Ratings  
Alpha microwave hyperabrupt diodes are designed  
for wideband tuning of microwave filters, resonators,  
and local oscillators. Linear tuning, not possible with  
conventional abrupt–junction tuning diodes, is  
accomplished by maintaining an accurate silicon  
doping profile using ion–implantation precision  
control techniques.  
Reverse Voltage, V :  
22V  
100 mA  
250 mW  
–55 to 150°C  
–65 to 200°C  
R
Forward Current, I :  
F
Power Dissipation at 25°C:  
Operating Temperature:  
Storage Temperature:  
These diodes are available in many Alpha ceramic  
packages. They can be supplied in chip form or  
mounted on a variety of packages. All chips are  
passivated with silicon dioxide for reliability and low  
leakage current.  
This series of hyperabrupt diodes offer wide  
bandwidth tuning with low bias voltage. For example,  
a 22 volt hyperabrupt diode can provide the same  
tuning variation as a 90 volt abrupt–junction diode.  
The specifications table indicates chip capacitance  
measured at 1 MHz. For packaged varactors add  
appropriate package capacitance, e.g., 0.22 pF for  
package 210, to obtain total capacitance.  
When capacitance and tuning ratio values are equal,  
a hyperabrupt diode will have a Q (measured at –4  
volts, 50 MHz) approximately 1/2 to 1/3 that of an  
abrupt–junction diode.  
Electrical Specifications at 25  
°C  
Square Passivated Silicon Chips  
V
I
C
@ 4V  
(pF)  
C
J
@ 20V  
(pF)  
Q
B
R
J
Chip  
Outline  
Number  
@ 10 µA  
(V)  
@ 17.6V  
(nA)  
@ 4V  
50 MHz  
Part  
Number  
Min.  
22  
Max.  
50  
Min.  
0.68  
1.13  
1.58  
2.48  
4.28  
Max.  
0.88  
1.43  
1.98  
3.08  
5.28  
Min.  
0.13  
0.23  
0.32  
0.48  
0.78  
Max.  
0.23  
0.33  
0.44  
0.68  
1.08  
Min.  
500  
500  
500  
400  
400  
" SMV2019–000  
SMV2020–000  
SMV2021–000  
SMV2022–000  
" SMV2023–000  
149–801  
149–801  
149–801  
149–801  
149–801  
22  
50  
22  
50  
22  
50  
22  
50  
" Available through distribution.  
Alpha Industries [617] 935Ć5150 Fax [617] 824Ć4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com  
2–10  

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