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SMS7623-108 PDF预览

SMS7623-108

更新时间: 2024-10-03 10:05:43
品牌 Logo 应用领域
思佳讯 - SKYWORKS /
页数 文件大小 规格书
8页 820K
描述
Mixer Diode, Silicon, HERMETIC SEALED PACKAGE-1

SMS7623-108 数据手册

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data sheet  
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips  
and Beam-Leads  
Applications  
l
Detectors  
Features  
l
Both P-type and N-type low barrier silicon available  
l
Low 1/f noise  
l
Bonded junctions for reliability  
l
Planar passivated beam-lead and chip construction  
l
See also zero bias silicon schottky barrier detector diodes  
Description  
Skyworks packaged, beam-lead and chip Schottky barrier detector  
diodes are designed for applications through 40 GHz in Ka band.  
Applications  
They are made by the deposition of a suitable barrier metal on an  
These diodes are categorized by TSS (Tangential Signal Sensitivity)  
epitaxial silicon substrate to form the junction. The process and  
for detector applications in four frequency ranges: S, X, Ku, and Ka  
choice of materials result in low series resistance along with a  
band. However, they can also be used as modulators, high-speed  
narrow spread of capacitance values for close impedance control.  
switches and low-power limiters.  
p-type silicon is used to obtain superior 1/f noise characteristics.  
TSS is a parameter that describes a diode’s detector sensitivity. It  
is defined as the amount of signal power, below a one-milliwatt  
reference level, to produce an output pulse whose amplitude is  
sufficient to raise the noise fluctuations by an amount equal to the  
average noise level. TSS is approximately 4 dB above the Minimum  
Detectable Signal.  
n-type silicon is also available.  
Packaged diodes are suitable for use in waveguide, coaxial, and  
stripline applications.  
Beam-lead and chip diodes can also be mounted in a variety of  
packages or on special customer substrates.  
Unmounted beam-lead diodes are especially well suited for use in  
MIC applications. Mounted beam-lead diodes can be easily used in  
MIC, stripline or other such circuitry.  
The p-type Schottky diodes in this data sheet are optimized for  
low noise, in the 1/f region. They require a small forward bias (to  
reduce video resistance) if efficient operation is required. Bias not  
only increases sensitivity but also reduces parameter variation  
due to temperature change. Video impedance is a direct function  
of bias and follows the 26/l (mA) relationship. This is important to  
pulse fidelity, since the video impedance in conjunction with the  
detector output capacitance affects the effective amplifier  
bandwidth.  
The “Universal Chips” are designed for a high degree of device  
reliability in both commercial and industrial uses. The offset  
bond pad assures that no mechanical damage will occur at the  
junction during the wire bonding. Additionally the 4 mil bond pad  
eliminates performance variation due to bonding and is ideal for  
automated assembly, and improves efficiency during manual  
operations as well.  
Bias does, however, increase typical noise, particularly in the 1/f  
region. Therefore, it should be kept at as low a level as possible  
(typically 5–50 microamps). Typical voltage output versus power  
input as a function of load resistance and bias is shown in Figures  
1a and 1b.  
The choice on n- and p-type silicon allows for the designer to opti-  
mize the silicon material for the intended application.  
l
Doppler mixers, high-sensitivity detectors will benefit from using  
the low noise characteristics of the p-type silicon.  
l
Low conversion loss mixers and biased detectors can be  
designed using standard n-type material.  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200847 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • October 3, 2008  
1

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