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SMP100-140H225 PDF预览

SMP100-140H225

更新时间: 2024-01-08 19:34:58
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 通信设备
页数 文件大小 规格书
9页 83K
描述
COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM

SMP100-140H225 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:SMALL OUTLINE, R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.26最大转折电压:200 V
配置:SINGLE最大维持电流:225 mA
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
通态非重复峰值电流:60 A元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified重复峰值反向电压:120 V
子类别:DIACs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

SMP100-140H225 数据手册

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SMP100-xxx  
TEST CIRCUIT 2 for IH parameter.  
R
- V  
P
D.U.T.  
V
= - 48 V  
BAT  
Surge generator  
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functionaltest circuit.  
TEST PROCEDURE :  
- Adjust the current level at the IH value by short circuiting the D.U.T.  
- Firethe D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.  
- The D.U.T. will come back to the off-statewithin 50 ms max.  
TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS  
100 V / µs, di/dt < 10 A / µs, Ipp = 100 A  
2 Ω  
45 Ω  
83 Ω  
46 µH  
0.36 nF  
10 µF  
U
66 Ω  
470 Ω  
KeyTekSystem 2’ generator with PN246I module  
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A  
46 µH  
26 µH  
60 µF  
250 Ω  
47 Ω  
U
12 Ω  
KeyTek ’System 2’ generator with PN246I module  
5/9  

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