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SMMUN2238LTIG PDF预览

SMMUN2238LTIG

更新时间: 2024-09-27 11:58:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
7页 111K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 =  k

SMMUN2238LTIG 数据手册

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MMUN2238L, NSBC123TF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 8 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING DIAGRAMS  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SOT23  
CASE 318  
STYLE 6  
XXX MG  
G
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
1
Compliant  
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
MAXIMUM RATINGS (T = 25°C)  
A
XXX  
M
G
= Specific Device Code  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
=
=
Date Code*  
PbFree Package  
V
V
CBO  
CEO  
50  
Vdc  
(Note: Microdot may be in either location)  
I
C
100  
12  
mAdc  
Vdc  
*Date Code orientation may vary depending  
upon manufacturing location.  
V
IN(fwd)  
Input Reverse Voltage  
V
6
Vdc  
IN(rev)  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 0  
DTC123T/D  

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