MMUN2238L, NSBC123TF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
PIN CONNECTIONS
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
MARKING DIAGRAMS
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
SOT−23
CASE 318
STYLE 6
XXX MG
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
SOT−1123
CASE 524AA
STYLE 1
X M
1
MAXIMUM RATINGS (T = 25°C)
A
XXX
M
G
= Specific Device Code
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
=
=
Date Code*
Pb−Free Package
V
V
CBO
CEO
50
Vdc
(Note: Microdot may be in either location)
I
C
100
12
mAdc
Vdc
*Date Code orientation may vary depending
upon manufacturing location.
V
IN(fwd)
Input Reverse Voltage
V
6
Vdc
IN(rev)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2012 − Rev. 0
DTC123T/D