SMF24AT1G PDF预览

SMF24AT1G

更新时间: 2025-08-02 19:02:23
品牌 Logo 应用领域
力特 - LITTELFUSE 电视
页数 文件大小 规格书
5页 3141K
描述
TVS DIODE 24V 38.9V SOD123FL

SMF24AT1G 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SOD-123FL, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.65Is Samacsys:N
其他特性:LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY最大击穿电压:29.5 V
最小击穿电压:26.7 V击穿电压标称值:28.1 V
最大钳位电压:38.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F2最大非重复峰值反向功率耗散:1000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.385 W认证状态:Not Qualified
参考标准:IEC-61000-4-2, 4-4最大重复峰值反向电压:24 V
最大反向电流:1 µA反向测试电压:24 V
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

SMF24AT1G 数据手册

 浏览型号SMF24AT1G的Datasheet PDF文件第2页浏览型号SMF24AT1G的Datasheet PDF文件第3页浏览型号SMF24AT1G的Datasheet PDF文件第4页浏览型号SMF24AT1G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 200W > SMF5.0AT1G Series  
Pb  
SMF5.0AT1G Series  
Description  
OBSOLETE/EOL  
DATE June/30/2018 PCN/ECN# LFPCN41246  
REPLACED BY SMF Series  
The SMF5.0AT1G Series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. Excellent clamping capability, high surge  
capability, low zener impedance and fast response time.  
Because of its small size, it is ideal for use in cellular  
phones, portable devices, business machines, power  
supplies and many other industrial/consumer applications.  
Features  
• Stand−off Voltage: 5 − 58 Volts  
• Peak Power − 200 Watts @ 1 ms (SMF5.0A − SMF58A)  
• Low Leakage  
Maximum Ratings andThermal Characteristics  
• ResponseTime isTypically < 1 ns  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Rating  
Symbol  
PPK  
Value  
200  
Unit  
W
• ESD Rating of Level 4 (8 kV Contact Discharge) per  
IEC61000−4−2  
Maximum Ppk Dissipation (PW−10/1000  
µs) (Note 1) SMF5.0A − SMF58A  
• EFT (Electrical FastTransients) Rating of 40 A per  
IEC61000−4−4  
Maximum Ppk Dissipation @TA = 25°C,  
(PW−8/20 µs) (Note 2)  
PPK  
1000  
W
• Low Profile − Maximum Height of 1.0 mm  
DC Power Dissipation @TA = 25°C  
(Note 3)  
Derate Above 25°C  
Thermal Resistance from Junction−to−  
Ambient (Note 3)  
mW  
mW/°C  
°C/W  
385  
4.0  
PD  
• Small Footprint − Footprint Area of 8.45 mm2  
• Supplied in 8 mmTape and Reel − 3,000 Units per Reel  
• Cathode Indicated by Polarity Band  
R
8JA  
325  
Operating and StorageTemperature  
Range  
−55 to  
+150  
TJ, Tstg  
°C  
• Lead Orientation inTape: Cathode Lead to Sprocket Holes  
• These Devices are Pb−Free and are RoHS Compliant  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are  
stress ratings only. Functional operation above the Recommended Operating Conditions is  
not implied. Extended exposure to stresses above the Recommended Operating Conditions  
may affect device reliability.  
Functional Diagram  
1. Non−repetitive current pulse atTA = 25°C, per waveform of Figure 2.  
2. Non−repetitive current pulse atTA = 25°C, per waveform of Figure 3.  
3. Mounted with recommended minimum pad size, DC board FR−4.  
Cathode  
Anode  
Additional Information  
Samples  
Datasheet  
Resources  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/13/17  

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