Datasheet > SMCTTA32N14A10

SMCTTA32N14A10

更新时间： 2024-02-05 17:53:15

品牌	Logo	应用领域
其他 - ETC		脉冲
页数	文件大小	规格书
5页	673K
描述
Advanced Pulse Power Device N-MOS VCS, ThinPakTM

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SMCTTA32N14A10 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Is Samacsys：	N	Base Number Matches：	1

SMCTTA32N14A10 数据手册

SMCT TA32N14A10

Advanced Pulse Power Device

N-MOS VCS, ThinPak^TM

Description

Package

This voltage controlled Solidtron (VCS) discharge switch

utilizes an n-type MOS-Controlled Thyristor mounted on a

ThinPakTM, ceramic "chip-scale" hybrid.

Gate Return

Bond Area

Gate Bond Area

Cathode Bond Area

The VCS features the high peak current capability and low On-

state voltage drop common to SCR thyristors combined with

extremely high dI/dt capability. This semiconductor is intended

for the control of high power circuits with the use of very small

amounts of input energy and is ideally suited for capacitor

discharge applications.

ThinPak^TM

Anode

Bond Area

The ThinPak^TMPackage is a perforated, metalized ceramic

substrate attached to the silicon using 302^oC solder. An epoxy

underfill is applied to protect the high voltage termination from

debris. All exterior metal surfaces are tinned with 63pb/37sn

solder providing the user with a circuit ready part. It's small

size and low profile make it extremely attractive to high dI/dt

applications where stray series inductance must be kept to a

minimum.

Schematic Symbol

Anode (A)

Features

Gate (G)

1400V Peak Off-State Voltage

32A Continuous Rating

4kA Surge Current Capability

>100kA/uSec dI/dt Capability

<100nSec Turn-On Delay

Low On-State Voltage

MOS Gated Control

Gate Return (GR)

Low Inductance Package

Cathode (K)

Absolute Maximum Ratings

SYMBOL

V_DRM

VALUE

1400

-5

UNITS

Peak Off-State Voltage

Peak Reverse Voltage

V_RRM

Off-State Rate of Change of Voltage Immunity

5000

V/uSec

dv/dt

I_A110

Continuous Anode Current at 110^oC

I_ASM

Repetitive Peak Anode Current (Pulse Width=1uSec)

Rate of Change of Current

4000

150

kA/uSec

dI/dt

V_GKS

Continuous Gate-Cathode Voltage

+/-20

+/-25

-5

V_GKM

V_GK(OFF-MIN)

T_JM

Peak Gate-Cathode Voltage

Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State

Maximum Junction Temperature

^oC

150

Maximum Soldering Temperature (Installation)

260

This SILICON POWER product is protected by one or more of the following U.S. Patents:

5,521,436

5,585,310

5,248,901

5,366,932

5,497,013

5,532,635

5,446,316

5,557,656

5,564,226

5,517,058

4,814,283

5,135,890

5,105,536

5,777,346

5,446,316

5,577,656

5,473,193

5,166,773

5,209,390

5,139,972

5,103,290

5,028,987

5,304,847

5,569,957

4,958,211

5,111,268

5,260,590

5,350,935

5,640,300

5,184,206

5,206,186

5,757,036

5,777,346

5,995,349

4,801,985

4,476,671

4,857,983

4,888,627

4,912,541

5,424,563

5,399,892

5,468,668

5,082,795

4,980,741

4,941,026

4,927,772

4,739,387

4,648,174

4,644,637

4,374,389

4,750,666

4,429,011

5,293,070

12 3 4 5

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