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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| SMBJ43CTR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2 |
|
| SMBJ43CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 43V V(RWM), Bidirectional, |
|
| SMBJ43D / CD | SWST |
获取价格 |
瞬态电压抑制管 |
|
| SMBJ43D-M3/H | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |
|
| SMBJ43E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |
|
| SMBJ43-E3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 43V V(RWM), Unidirectional, |
|
| SMBJ43-E3/5B | VISHAY |
获取价格 |
TVS DIODE 43V 76.7V DO214AA |
|
| SMBJ43E3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |
|
| SMBJ43E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |
|
| SMBJ43E3TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
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