5秒后页面跳转
SMBJ12CATRE3 PDF预览

SMBJ12CATRE3

更新时间: 2024-11-27 09:47:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 182K
描述
Trans Voltage Suppressor Diode, 12V V(RWM), Bidirectional,

SMBJ12CATRE3 数据手册

 浏览型号SMBJ12CATRE3的Datasheet PDF文件第2页浏览型号SMBJ12CATRE3的Datasheet PDF文件第3页浏览型号SMBJ12CATRE3的Datasheet PDF文件第4页 
SMBJ5.0 thru SMBJ170A, CA, e3  
and SMBG5.0 thru SMBG170A, CA, e3  
SURFACE MOUNT 600 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This SMBJ5.0-170A or SMBG5.0-170A series of surface mount 600 W  
Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive  
components from destruction or degradation. It is available in J-bend design  
(SMBJ) with the DO-214AA package for greater PC board mounting density or  
in a Gull-wing design (SMBG) in the DO-215AA for visible solder connections.  
It is also available in both unidirectional and bidirectional configurations with a  
C or CA suffix part number as well as RoHS Compliant with an e3 suffix. Their  
response time is virtually instantaneous. As a result, they can be used for  
protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for  
inductive switching environments and induced RF protection. They can also  
protect from secondary lightning effects per IEC61000-4-5 and class levels  
defined herein. Microsemi also offers numerous other TVS products to meet  
NOTE: All SMB series are  
equivalent to prior SMS package  
identifications.  
higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Available in both unidirectional and bidirectional  
Economical surface mount design in both J-bend or  
Gull-wing terminations  
construction (add C or CA suffix for bidirectional)  
Selections for 5.0 to 170 volts standoff voltages (VWM  
)
Protects sensitive components such as IC’s, CMOS,  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for 100% temperature  
cycle -55oC to +125oC (10X) as well as surge (3X) and 24  
hours HTRB with post test VZ & IR (in operating direction  
for unidirectional or both directions for bidirectional)  
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV by adding MQ, MX, or MV  
prefixes respectively to part numbers.  
Class 1: SMB 5.0 to SMB 120A or CA  
Class 2: SMB 5.0 to SMB 60A or CA  
Class 3: SMB 5.0 to SMB 30A or CA  
Class 4: SMB 5.0 to SMB 15A or CA  
Axial-lead equivalent packages for thru-hole mounting  
available as P6KE6.8 to P6KE200CA (consult factory for  
other surface mount options)  
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
Class 1: SMB 5.0 to SMB 36A or CA  
Class 2: SMB 5.0 to SMB 18A or CA  
RoHS compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
Peak Pulse Power dissipation at 25ºC: 600 watts at  
10/1000 μs (also see Fig 1,2, and 3).  
MECHANICAL AND PACKAGING  
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
Impulse repetition rate (duty factor): 0.01%  
TERMINALS: Gull-wing or C-bend (modified J-bend)  
tin-lead or RoHS compliant annealed matte-tin plating  
solderable per MIL-STD-750, method 2026  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65ºC to +150ºC  
POLARITY: Cathode indicated by band. No marking  
on bi-directional devices  
Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W  
junction to ambient when mounted on FR4 PC board (1oz  
Cu) with recommended footprint (see last page)  
MARKING: Part number without standard prefix (e.g.  
5.0, 5.0A, 5.0CA, 5.0Ae3, 36, MX36A, 36CAe3, etc.)  
Steady-State Power dissipation: 5 watts at TL = 25oC, or  
1.38 watts at TA = 25ºC when mounted on FR4 PC board  
with recommended footprint  
TAPE & REEL option: Standard per EIA-481-1-A with  
12 mm tape, 750 per 7 inch reel or 2500 per 13 inch  
reel (add “TR” suffix to part number)  
WEIGHT: 0.1 grams  
Forward Surge at 25ºC: 100 Amps peak impulse of 8.3  
See package dimension on last page  
ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright © 2007  
6-20-2007 REV H  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与SMBJ12CATRE3相关器件

型号 品牌 获取价格 描述 数据表
SMBJ12CD-M3/I VISHAY

获取价格

TVS DIODE 12V 19.6V DO214AA
SMBJ12C-E3/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12C-E3/52 VISHAY

获取价格

TVS DIODE 12V 22V DO214AA
SMBJ12C-E3/55 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12C-E3/5B VISHAY

获取价格

TVS DIODE 12V 22V DO214AA
SMBJ12CE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CE3/TR13 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CE3/TR7 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ12CE3TR MICROSEMI

获取价格

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ12C-G SENSITRON

获取价格

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21